Dual Threshold Voltage Organic Thin-Film Transistor Technology

Publication Type:

Journal Article

Source:

IEEE Trans. Electron Devices, ieeexplore.ieee.org, Volume 57, Issue 11, p.3027-3032 (2010)

ISBN:

0018-9383

Keywords:

2010, 2013 and earlier, current-voltage transfer curves, Digital integrated circuits, Digital integrated ciruicts, dual threshold voltage organic thin-film transistor technology, flexible large-area integrated circuits, integrated circuits, Inverters, low-power electronics, low-power organic integrated circuits, organic compounds, Organic thin film transistors, p-channel organic devices, p-channel transistors, Pentacene, photolithographic dual threshold voltage organic thin-film transistor, temperature 95 C, thin film transistors, thin-film transistors (TFTs)

Abstract:

A fully photolithographic dual threshold voltage (VT) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated
circuits is presented. The nearroom-temperature (T pentacene-based
p-channel transistors. The two VT 's are enabled by using two gate metals
of low (aluminum) and high (platinum) work function. The Al and Pt gate
OTFTs exhibit nominally identical current-voltage transfer curves shifted
by an amount ΔVT. The availability of a high-VT device enables
area-efficient zero-Vos high-output-resistance current sources, enabling
high-gain inverters. We present positive noise margin inverters and
rail-to-rail ring oscillators powered by a 3-V supply-one of the lowest
supply voltages reported for OTFT circuits. These results show that
integrating nand p-channel organic devices is not mandatory to achieve
functional area-efficient low-power organic integrated circuits.