A Low Temperature Fully Lithographic Process For Metal #x2013;Oxide Field-Effect Transistors

Publication Type:

Journal Article

Source:

Display Technology, Journal of, IEEE, Volume 6, Issue 1, p.22-26 (2010)

ISBN:

1551-319X

Keywords:

2010, 2013 and earlier, Amorphous materials, amorphous semiconductors, dielectric materials, Dielectric substrates, FETs, field effect transistors, integrated lithographic process, large area electronic applications, Lithography, low temperature fully lithographic process, metal-oxide field-effect transistors, OFETs, Optical films, Plasma temperature, Semiconductivity, Semiconductor films, Silicon compounds, thin-film transistors (TFTs), zinc-indium-oxide semiconductor channel

Abstract:

We report a low temperature ( 100°C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a
zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene,
dielectric layer. The transistors show a field-effect mobility of
(12±0.8) cm2 V-1 s-1, on/off ratio of 108 and turn-off voltage of Voff =