NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices

Publication Type:

Journal Article

Source:

Nano Lett., ACS Publications, Volume 6, Issue 12, p.2991-2994 (2006)

ISBN:

1530-6984

Keywords:

2006, 2013 and earlier

Abstract:

We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer
sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum
(Alq3), as hole and electron transporting layers, respectively. A maximum
external electroluminescence quantum efficiency of 0.18% is achieved by
tuning the resistivity of the NiO layer to balance the electron and hole
densities at quantum-dot sites.