Photovoltaic effect by vapor-printed polyselenophene

Publication Type:

Journal Article


Org. Electron., Elsevier, Volume 26, p.55-60 (2015)




2015, Bilayer heterojunction, Chemical vapor deposition, Polymer solar cells, Unsubstituted polyselenophene, Vapor printing


Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned
films of this insoluble semiconductor were fabricated using a vacuum-based
vapor-printing technique, oxidative chemical vapor deposition (oCVD)
combined with in-situ shadow masking. The vapor-printed PSe exhibits a
reduced optical bandgap of 1.76 eV and enhanced photo-responsivity in the
red compared to its sulfur containing analog, polythiophene. These
relative advantages are most likely explained by selenium’s enhanced
electron-donating character compared to sulfur. The HOMO level of PSe was
determined to be at −4.85 eV. The maximum power conversion efficiency
achieved was 0.4% using a bilayer heterojunction device architecture with
C60 as the donor.