Publication Type:Journal Article
Source:J. Appl. Phys., AIP Publishing, Volume 111, Issue 11, p.113701 (2012)
Keywords:2012, 2013 and earlier
Semiconductor nanocrystals, or quantum dots(QDs), promise to drive advances in electronic light generation. It was recently shown that long
range transport of charge, which is typically required for electric
excitation and which is inherently limited in nanosized materials, can be
avoided by developing devices that operate through local, field-assisted
generation of charge. We investigate such devices that consist of a thin
film of CdSe/ZnS core-shell QD placed between two dielectric layers and
that exhibit electroluminescence under pulsed, high field excitation.
Using electrical and spectroscopic measurements, we are able to elucidate
the dynamics of charge within the QD layer and determine that charge
trapping and field-induced luminescence quenching are the main limitations
of device performance.