Tunneling nanoelectromechanical switches

Publication Type:



Energy Efficient Electronic Systems (E3S), 2015 Fourth Berkeley Symposium on , ieeexplore.ieee.org, p.1-3 (2015)


2015, Adhesives, Electrodes, failure analysis, field effect transistor switches, leakage currents, metal-oxide semiconductor transistors, microswitches, MOS transistors, nanoelectromechanical devices, Nanoscale devices, near-zero off-state leakage currents, NEM switches, on-off current ratios, Self-assembly, stiction-induced failure, sub-threshold slopes, surface adhesion forces, surface treatment, switches, switching behavior, Tunneling, tunneling nanoelectromechanical switches, tunnelling


Nanoelectromechanical (NEM) switches have emerged as a promising competing technology to the conventional metal-oxide semiconductor (MOS)
transistors. NEM switches exhibit abrupt switching behavior with large
on-off current ratios, near-zero off-state leakage currents and
sub-threshold slopes below the 60 mV/decade theoretical limit of
conventional MOS devices [1]. However, current NEM switches commonly
operate at relatively high actuation voltages exceeding 1 V and suffer
from failure due to stiction [1]. Reducing the switching gap is a common
approach utilized to lower the operating voltage. However, the decrease in
the gap size further increases the surface adhesion forces and
consequently the possibility of stiction-induced failure.